Invention Grant
US09466788B2 Top electrode etch in a magnetoresistive device and devices manufactured using same
有权
磁阻器件中的顶部电极蚀刻和使用其制造的器件
- Patent Title: Top electrode etch in a magnetoresistive device and devices manufactured using same
- Patent Title (中): 磁阻器件中的顶部电极蚀刻和使用其制造的器件
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Application No.: US14492768Application Date: 2014-09-22
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Publication No.: US09466788B2Publication Date: 2016-10-11
- Inventor: Sarin A. Deshpande , Sanjeev Aggarwal , Kerry Joseph Nagel
- Applicant: Everspin Technologies, Inc.
- Applicant Address: US AZ Chandler
- Assignee: Everspin Technologies, Inc.
- Current Assignee: Everspin Technologies, Inc.
- Current Assignee Address: US AZ Chandler
- Main IPC: H01L43/12
- IPC: H01L43/12
Abstract:
A two-step etching process is used to form the top electrode for a magnetoresistive device. The etching chemistries are different for each of the two etching steps. The first chemistry used to etch the top portion of the electrode is more selective with respect to the conductive material of the top electrode, thereby reducing unwanted erosion of the photoresist and hard mask layers. The second chemistry is less corrosive than the first chemistry and does not damage the layers underlying the top electrode, such as those included in the magnetic tunnel junction.
Public/Granted literature
- US20150236250A1 TOP ELECTRODE ETCH IN A MAGNETORESISTIVE DEVICE AND DEVICES MANUFACTURED USING SAME Public/Granted day:2015-08-20
Information query
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