Invention Grant
- Patent Title: X-ray detector
- Patent Title (中): X射线探测器
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Application No.: US14725429Application Date: 2015-05-29
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Publication No.: US09470803B2Publication Date: 2016-10-18
- Inventor: Jaechul Park , Sunil Kim , Dongwook Lee , Changbum Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2014-0101102 20140806
- Main IPC: G01T1/24
- IPC: G01T1/24 ; H01L31/0272 ; H01L31/032 ; H01L27/146

Abstract:
An X-ray detector may include: a thin film transistor (TFT) unit; and/or a capacitor unit. The capacitor unit may include two or more storage capacitors. The TFT unit may include: a gate electrode on one region of a substrate; a gate insulating layer on the gate electrode; an active layer on the gate insulating layer; and/or a source electrode and a drain electrode respectively on sides of the active layer.
Public/Granted literature
- US20160041274A1 X-RAY DETECTOR Public/Granted day:2016-02-11
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