Invention Grant
- Patent Title: Scanning electron microscope
- Patent Title (中): 扫描电子显微镜
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Application No.: US14379715Application Date: 2013-02-18
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Publication No.: US09472376B2Publication Date: 2016-10-18
- Inventor: Toshiyuki Yokosuka , Chahn Lee , Hideyuki Kazumi , Hiroshi Makino , Yuzuru Mizuhara , Miki Isawa , Michio Hatano , Yoshinori Momonoi
- Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2012-072710 20120328
- International Application: PCT/JP2013/053790 WO 20130218
- International Announcement: WO2013/145924 WO 20131003
- Main IPC: H01J37/28
- IPC: H01J37/28 ; G01B15/00 ; G01B15/04

Abstract:
An object of the invention is to provide a scanning electron microscope which forms an electric field to lift up, highly efficiently, electrons discharged from a hole bottom or the like even if a sample surface is an electrically conductive material. To achieve the above object, according to the invention, a scanning electron microscope including a deflector which deflects a scanning position of an electron beam, and a sample stage for loading a sample thereon, is proposed. The scanning electron microscope includes a control device which controls the deflector or the sample stage in such a way that before scanning a beam on a measurement target pattern, a lower layer pattern situated in a lower layer of the measurement target pattern undergoes beam irradiation on another pattern situated in the lower layer.
Public/Granted literature
- US20150008322A1 SCANNING ELECTRON MICROSCOPE Public/Granted day:2015-01-08
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