Invention Grant
US09472554B2 Integrated circuits having FinFET semiconductor devices and methods of fabricating the same to resist sub-fin current leakage
有权
具有FinFET半导体器件的集成电路及其制造方法以抵抗子鳍电流泄漏
- Patent Title: Integrated circuits having FinFET semiconductor devices and methods of fabricating the same to resist sub-fin current leakage
- Patent Title (中): 具有FinFET半导体器件的集成电路及其制造方法以抵抗子鳍电流泄漏
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Application No.: US13955693Application Date: 2013-07-31
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Publication No.: US09472554B2Publication Date: 2016-10-18
- Inventor: Michael Hargrove , Yanxiang Liu , Christian Gruensfelder
- Applicant: GLOBALFOUNDRIES, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Lorenz & Kopf, LLP
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L27/092 ; H01L21/8238
Abstract:
Integrated circuits that have a FinFET and methods of fabricating the integrated circuits are provided herein. In an embodiment, a method of fabricating an integrated circuit having a FinFET includes providing a substrate comprising fins. The fins include semiconductor material. A first metal oxide layer is formed over sidewall surfaces of the fins. The first metal oxide layer includes a first metal oxide. The first metal oxide layer is recessed to a depth below a top surface of the fins to form a recessed first metal oxide layer. The top surface and sidewall surfaces of the fins at a top portion of the fins are free from the first metal oxide layer. A gate electrode structure is formed over the top surface and sidewall surfaces of the fins at the top portion of the fins. The recessed first metal oxide layer is recessed beneath the gate electrode structure.
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Information query
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