Invention Grant
- Patent Title: Semiconductor structure
- Patent Title (中): 半导体结构
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Application No.: US14798948Application Date: 2015-07-14
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Publication No.: US09472661B1Publication Date: 2016-10-18
- Inventor: Shih-Yin Hsiao , Chang-Po Hsiung
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsinchu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Agent Justin King
- Priority: CN201510352792 20150624
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/06 ; H01L29/40 ; H01L29/10
Abstract:
A semiconductor structure suitable for operating under a high voltage condition is provided. According to one aspect of the disclosure, the semiconductor structure includes a substrate, a gate, a source region, a drain region and a field-adjusting structure. The gate is disposed on the substrate. The source region and the drain region are disposed in the substrate and at opposite sides of the gate. The field-adjusting structure is disposed on the substrate at an outer side of one of the source region and the drain region. The field-adjusting structure comprises a first portion and a second portion. The second portion is disposed at an outer side of the first portion. The first portion is connected to the gate. The second portion is connected to the one of the source region and the drain region.
Information query
IPC分类:
