发明授权
- 专利标题： Eliminating fin mismatch using isolation last
- 专利标题（中）： 消除鳍不匹配，最后使用隔离
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申请号： US14017564申请日： 2013-09-04
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公开(公告)号： US09472672B2公开(公告)日： 2016-10-18
- 发明人: Yi-Tang Lin , Chih-Yu Hsu , Clement Hsingjen Wann , Chih-Sheng Chang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L21/76 ; H01L21/8238 ; H01L21/84 ; H01L27/092 ; H01L27/12
摘要：
An embodiment fin field-effect transistor (FinFET) includes an inner fin, and outer fin spaced apart from the inner fin by a shallow trench isolation (STI) region, an isolation fin spaced apart from the outer fin by the STI region, the isolation fin including a body portion, an isolation oxide, and an etch stop layer, the etch stop layer interposed between the body portion and the isolation oxide and between the STI region and the isolation oxide, and a gate formed over the inner fin, the outer fin, and the isolation fin.
公开/授权文献
- US20150060959A1 Eliminating Fin Mismatch Using Isolation Last 公开/授权日：2015-03-05
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