Invention Grant
- Patent Title: Silicon oxide selective removal
- Patent Title (中): 氧化硅选择性去除
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Application No.: US14542394Application Date: 2014-11-14
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Publication No.: US09478432B2Publication Date: 2016-10-25
- Inventor: Zhijun Chen , Anchuan Wang , Nitin K. Ingle
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/311 ; H01J37/32
Abstract:
A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using plasma effluents formed in a remote plasma. The remote plasma excites a fluorine-containing precursor in combination with an oxygen-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor or an alcohol. The combination react with the patterned heterogeneous structures to remove an exposed silicon oxide portion faster than a second exposed portion. The inclusion of the oxygen-containing precursor may suppress the second exposed portion etch rate and result in unprecedented silicon oxide etch selectivity.
Public/Granted literature
- US20160093506A1 SILICON OXIDE SELECTIVE REMOVAL Public/Granted day:2016-03-31
Information query
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