An embodiment of a process for manufacturing a system for electrical testing of a through via extending in a vertical direction through a substrate of semiconductor material envisages integrating an electrical testing circuit in the body to enable detection of at least one electrical parameter of the through via through a microelectronic buried structure defining an electrical path between electrical-connection elements towards the outside and a buried end of the through via; the integration step envisages providing a trench and forming a doped buried region at the bottom of the trench, having a doping opposite to that of the substrate so as to form a semiconductor junction, defining the electrical path when it is forward biased; in particular, the semiconductor junction has a junction area smaller than the area of a surface of the conductive region in a horizontal plane transverse to the vertical direction, in such a way as to have a reduced reverse saturation current.