Invention Grant
- Patent Title: FinFET having doped region and method of forming the same
- Patent Title (中): 具有掺杂区域的FinFET及其形成方法
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Application No.: US14310333Application Date: 2014-06-20
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Publication No.: US09478659B2Publication Date: 2016-10-25
- Inventor: Chia-Chung Chen , Chi-Feng Huang , Victor Chiang Liang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L27/12 ; H01L27/108 ; H01L29/66 ; H01L29/78
Abstract:
A transistor includes a substrate having an upper surface, a fin structure protruding from the upper surface of the substrate, an isolation structure over the upper surface of the substrate and surrounding a lower portion of the fin structure, and a first doped region at least partially embedded in an upper portion of the fin structure. The fin structure extends along a first direction. The first doped region has a first type doping different from that of the fin structure.
Public/Granted literature
- US20150108582A1 FINFET HAVING DOPED REGION AND METHOD OF FORMING THE SAME Public/Granted day:2015-04-23
Information query
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