Invention Grant
US09478660B2 Protection layer on fin of fin field effect transistor (FinFET) device structure
有权
鳍式场效应晶体管（FinFET）器件结构鳍片上的保护层
- Patent Title: Protection layer on fin of fin field effect transistor (FinFET) device structure
- Patent Title (中): 鳍式场效应晶体管（FinFET）器件结构鳍片上的保护层
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Application No.: US14677405Application Date: 2015-04-02
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Publication No.: US09478660B2Publication Date: 2016-10-25
- Inventor: Shiu-Ko Jangjian , Chi-Cherng Jeng , Chih-Nan Wu , Chun-Che Lin , Ting-Chun Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L29/78 ; H01L29/06 ; H01L29/66
Abstract:
A fin field device structure and method for forming the same are provided. The FinFET device structure includes a substrate and a fin structure extending from the substrate. The FinFET device structure also includes an isolation structure formed on the substrate. The fin structure has a top portion and a bottom portion, and the bottom portion is embedded in the isolation structure. The FinFET device structure further includes a protection layer formed on the top portion of the fin structure. An interface is between the protection layer and the top portion of the fin structure, and the interface has a roughness in a range from about 0.1 nm to about 2.0 nm.
Public/Granted literature
- US20160204245A1 PROTECTION LAYER ON FIN OF FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE Public/Granted day:2016-07-14
Information query
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