Invention Grant
- Patent Title: Radiation coupler
- Patent Title (中): 辐射耦合器
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Application No.: US14560909Application Date: 2014-12-04
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Publication No.: US09482816B2Publication Date: 2016-11-01
- Inventor: Joris Van Campenhout , Philippe Absil , Peter Verheyen
- Applicant: IMEC VZW
- Applicant Address: BE Leuven
- Assignee: IMEC VZW
- Current Assignee: IMEC VZW
- Current Assignee Address: BE Leuven
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- Priority: EP13198498 20131219
- Main IPC: G02B6/12
- IPC: G02B6/12 ; G02B6/124 ; G02B6/42 ; G02B6/34

Abstract:
Semiconductor photonics devices for coupling radiation to a semiconductor waveguide are described. An example photonics device comprises a semiconductor-on-insulator substrate comprising a semiconductor substrate, a buried oxide layer positioned on top of the semiconductor substrate, and the semiconductor waveguide on top of the buried oxide layer to which radiation is to be coupled. The example device also comprises a grating coupler positioned on top of the buried oxide layer and configured for coupling incident radiation to the semiconductor waveguide. The semiconductor substrate has a recessed portion at the backside of the semiconductor substrate for receiving incident radiation to be coupled to the semiconductor waveguide via the backside of the semiconductor substrate and the grating coupler.
Public/Granted literature
- US20150177459A1 Radiation Coupler Public/Granted day:2015-06-25
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