公开(公告)号：US09482816B2

公开(公告)日：2016-11-01

申请号：US14560909

申请日：2014-12-04

Applicant: IMEC VZW

Inventor： Joris Van Campenhout ,  Philippe Absil ,  Peter Verheyen

IPC: G02B6/12 ,  G02B6/124 ,  G02B6/42 ,  G02B6/34

CPC classification number: G02B6/124 ,  G02B6/34 ,  G02B6/4214 ,  G02B2006/12061 ,  G02B2006/12104 ,  G02B2006/12107 ,  G02B2006/12147

Abstract: Semiconductor photonics devices for coupling radiation to a semiconductor waveguide are described. An example photonics device comprises a semiconductor-on-insulator substrate comprising a semiconductor substrate, a buried oxide layer positioned on top of the semiconductor substrate, and the semiconductor waveguide on top of the buried oxide layer to which radiation is to be coupled. The example device also comprises a grating coupler positioned on top of the buried oxide layer and configured for coupling incident radiation to the semiconductor waveguide. The semiconductor substrate has a recessed portion at the backside of the semiconductor substrate for receiving incident radiation to be coupled to the semiconductor waveguide via the backside of the semiconductor substrate and the grating coupler.

Abstract translation: 描述了用于将辐射耦合到半导体波导的半导体光子器件。 一种示例性光子器件包括绝缘体上半导体衬底，其包括半导体衬底，位于半导体衬底顶部的掩埋氧化物层，以及辐射将与之耦合的掩埋氧化物层顶部的半导体波导。 示例性器件还包括位于掩埋氧化物层顶部并被配置用于将入射辐射耦合到半导体波导的光栅耦合器。 半导体衬底在半导体衬底的背面具有凹陷部分，用于接收经由半导体衬底和光栅耦合器的背面与半导体波导耦合的入射辐射。

公开(公告)号：US11600735B2

公开(公告)日：2023-03-07

申请号：US17370578

申请日：2021-07-08

Applicant: IMEC VZW

Inventor： Ashwyn Srinivasan ,  Peter Verheyen ,  Philippe Absil ,  Joris Van Campenhout

IPC: H01L31/107 ,  H01L31/18

Abstract: A method is provided for fabricating an avalanche photodiode (APD) device, in particular, a separate absorption charge multiplication (SACM) APD device. The method includes forming a first contact region and a second contact region in a semiconductor layer. Further, the method includes forming a first mask layer above at least a first contact region of the semiconductor layer adjacent to the first contact region, and forming a second mask layer above and laterally overlapping the first mask layer. Thereby, a mask window is defined by the first mask layer and the second mask layer, and the first mask layer and/or the second mask layer are formed above a second contact region of the semiconductor layer adjacent to the second contact region. Further, the method includes forming a charge region in the semiconductor layer through the mask window, wherein the charge region is formed between the first contact region and the second contact region, and comprises forming an absorption region on the first contact region using the first mask layer. An APD fabricated by the disclosed method is also provided.

公开(公告)号：US09791621B2

公开(公告)日：2017-10-17

申请号：US14971466

申请日：2015-12-16

Applicant: IMEC VZW

Inventor： Philippe Absil ,  Shankar Kumar Selvaraja

IPC: G02B6/12 ,  G02B6/132 ,  G02B6/13 ,  G02B6/136

CPC classification number: G02B6/12 ,  G02B6/13 ,  G02B6/132 ,  G02B6/136 ,  G02B2006/12038 ,  G02B2006/12061 ,  G02B2006/12169

Abstract: A method for fabricating an integrated semiconductor photonics device is disclosed. The method may include providing a first substrate having on its top surface a monocrystalline semiconductor layer suitable for supporting an optical mode and forming a homogenous and conformal first dielectric layer on a planar surface of the monocrystalline semiconductor layer. The method may further include providing a dielectric waveguide core on the first dielectric layer, the dielectric waveguide core optically coupled to a first region of the monocrystalline semiconductor layer through the first dielectric layer. The method may further include depositing a second dielectric layer on the dielectric waveguide core, thereby covering the dielectric waveguide core, and annealing the substrate to drive hydrogen out of the dielectric waveguide core.

公开(公告)号：US20160170139A1

公开(公告)日：2016-06-16

申请号：US14971466

申请日：2015-12-16

Applicant: IMEC VZW

Inventor： Philippe Absil ,  Shankar Kumar Selvaraja

IPC: G02B6/12 ,  G02B6/132

CPC classification number: G02B6/12 ,  G02B6/13 ,  G02B6/132 ,  G02B6/136 ,  G02B2006/12038 ,  G02B2006/12061 ,  G02B2006/12169

Abstract: A method for fabricating an integrated semiconductor photonics device is disclosed. The method may include providing a first substrate having on its top surface a monocrystalline semiconductor layer suitable for supporting an optical mode and forming a homogenous and conformal first dielectric layer on a planar surface of the monocrystalline semiconductor layer. The method may further include providing a dielectric waveguide core on the first dielectric layer, the dielectric waveguide core optically coupled to a first region of the monocrystalline semiconductor layer through the first dielectric layer. The method may further include depositing a second dielectric layer on the dielectric waveguide core, thereby covering the dielectric waveguide core, and annealing the substrate to drive hydrogen out of the dielectric waveguide core.

Abstract translation: 公开了一种用于制造集成半导体光子学器件的方法。 该方法可以包括提供第一衬底，其在其顶表面上具有适于支撑光学模式的单晶半导体层，并在单晶半导体层的平坦表面上形成均匀且适形的第一介电层。 该方法可以进一步包括在第一电介质层上提供电介质波导芯，电介质波导芯通过第一介电层光耦合到单晶半导体层的第一区域。 该方法还可以包括在电介质波导芯上沉积第二电介质层，从而覆盖电介质波导芯，并退火衬底以将氢驱出电介质波导芯。

公开(公告)号：US20150177459A1

公开(公告)日：2015-06-25

申请号：US14560909

申请日：2014-12-04

Applicant: IMEC VZW

Inventor： Joris Van Campenhout ,  Philippe Absil ,  Peter Verheyen

IPC: G02B6/122

CPC classification number: G02B6/124 ,  G02B6/34 ,  G02B6/4214 ,  G02B2006/12061 ,  G02B2006/12104 ,  G02B2006/12107 ,  G02B2006/12147

Abstract: Semiconductor photonics devices for coupling radiation to a semiconductor waveguide are described. An example photonics device comprises a semiconductor-on-insulator substrate comprising a semiconductor substrate, a buried oxide layer positioned on top of the semiconductor substrate, and the semiconductor waveguide on top of the buried oxide layer to which radiation is to be coupled. The example device also comprises a grating coupler positioned on top of the buried oxide layer and configured for coupling incident radiation to the semiconductor waveguide. The semiconductor substrate has a recessed portion at the backside of the semiconductor substrate for receiving incident radiation to be coupled to the semiconductor waveguide via the backside of the semiconductor substrate and the grating coupler.

Abstract translation: 描述了用于将辐射耦合到半导体波导的半导体光子器件。 一种示例性光子器件包括绝缘体上半导体衬底，其包括半导体衬底，位于半导体衬底顶部的掩埋氧化物层，以及辐射将与之耦合的掩埋氧化物层顶部的半导体波导。 示例性器件还包括位于掩埋氧化物层顶部并被配置用于将入射辐射耦合到半导体波导的光栅耦合器。 半导体衬底在半导体衬底的背面具有凹陷部分，用于接收经由半导体衬底和光栅耦合器的背面与半导体波导耦合的入射辐射。

公开(公告)号：US20220013682A1

公开(公告)日：2022-01-13

申请号：US17370578

申请日：2021-07-08

Applicant: IMEC VZW

Inventor： Ashwyn Srinivasan ,  Peter Verheyen ,  Philippe Absil ,  Joris Van Campenhout

IPC: H01L31/107 ,  H01L31/18

Abstract: A method is provided for fabricating an avalanche photodiode (APD) device, in particular, a separate absorption charge multiplication (SACM) APD device. The method includes forming a first contact region and a second contact region in a semiconductor layer. Further, the method includes forming a first mask layer above at least a first contact region of the semiconductor layer adjacent to the first contact region, and forming a second mask layer above and laterally overlapping the first mask layer. Thereby, a mask window is defined by the first mask layer and the second mask layer, and the first mask layer and/or the second mask layer are formed above a second contact region of the semiconductor layer adjacent to the second contact region. Further, the method includes forming a charge region in the semiconductor layer through the mask window, wherein the charge region is formed between the first contact region and the second contact region, and comprises forming an absorption region on the first contact region using the first mask layer. An APD fabricated by the disclosed method is also provided.