Invention Grant
- Patent Title: Nonvolatile memory devices and methods of controlling the same
- Patent Title (中): 非易失存储器件及其控制方法
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Application No.: US14523159Application Date: 2014-10-24
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Publication No.: US09483413B2Publication Date: 2016-11-01
- Inventor: Avner Dor , Elona Erez , Shay Landis , Jun Jin Kong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Main IPC: G06F12/10
- IPC: G06F12/10

Abstract:
At least one example embodiment discloses a method of controlling a nonvolatile memory device including a plurality of blocks, each block including a plurality of physical pages. The method includes receiving a plurality of logical pages associated with a first plurality of logical addresses, respectively, and writing the first plurality of logical pages to the plurality physical addresses according to an ascending order of the logical addresses of the first plurality of logical pages.
Public/Granted literature
- US20160117256A1 NONVOLATILE MEMORY DEVICES AND METHODS OF CONTROLLING THE SAME Public/Granted day:2016-04-28
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