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发明授权
US09484087B2 Multi-bit memory elements, memory devices including the same, and methods of manufacturing the same 有权
多位存储器元件，包括其的存储器件及其制造方法

Multi-bit memory elements, memory devices including the same, and methods of manufacturing the same
摘要：
In one embodiment, the memory element may include a first electrode, a second electrode spaced apart from the first electrode, a memory layer between the first electrode and the second electrode, and an auxiliary layer between the memory layer and the second electrode. The auxiliary layer provides a multi-bit memory characteristic to the memory layer.
摘要（中）：

在一个实施例中，存储元件可以包括第一电极，与第一电极间隔开的第二电极，在第一电极和第二电极之间的存储层，以及在存储层和第二电极之间的辅助层。 辅助层向存储器层提供多位存储器特性。

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