Invention Grant
- Patent Title: Methods for reducing semiconductor substrate strain variation
- Patent Title (中): 减少半导体衬底应变变化的方法
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Application No.: US14730198Application Date: 2015-06-03
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Publication No.: US09484274B2Publication Date: 2016-11-01
- Inventor: Christopher Dennis Bencher , Ehud Tzuri , Ellie Y. Yieh
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/66 ; H01L21/268
Abstract:
Embodiments of the disclosure provide methods and system for correcting lithographic film stress/strain variations on a semiconductor substrate using laser energy treatment process. In one embodiment, a method for correcting film stress/strain variations on a substrate includes performing a measurement process in a metrology tool on a substrate to obtain a substrate distortion or an overlay error map, determining dose of laser energy in a computing system to correct film stress/strain variations or substrate distortion based on the overlay error map, and providing a laser energy treatment recipe to a laser energy apparatus based on the dose of laser energy determined to correct substrate distortion or film stress/strain variations.
Public/Granted literature
- US20150371908A1 METHODS FOR REDUCING SEMICONDUCTOR SUBSTRATE STRAIN VARIATION Public/Granted day:2015-12-24
Information query
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