公开(公告)号：US09484274B2

公开(公告)日：2016-11-01

申请号：US14730198

申请日：2015-06-03

Applicant: Applied Materials, Inc.

Inventor： Christopher Dennis Bencher ,  Ehud Tzuri ,  Ellie Y. Yieh

IPC: H01L21/02 ,  H01L21/66 ,  H01L21/268

CPC classification number: H01L22/20 ,  H01L21/268 ,  H01L21/2686 ,  H01L22/12

Abstract: Embodiments of the disclosure provide methods and system for correcting lithographic film stress/strain variations on a semiconductor substrate using laser energy treatment process. In one embodiment, a method for correcting film stress/strain variations on a substrate includes performing a measurement process in a metrology tool on a substrate to obtain a substrate distortion or an overlay error map, determining dose of laser energy in a computing system to correct film stress/strain variations or substrate distortion based on the overlay error map, and providing a laser energy treatment recipe to a laser energy apparatus based on the dose of laser energy determined to correct substrate distortion or film stress/strain variations.

Abstract translation: 本公开的实施例提供了使用激光能量处理过程来校正半导体衬底上的平版印刷薄膜应力/应变变化的方法和系统。 在一个实施例中，用于校正衬底上的膜应力/应变变化的方法包括在衬底上的测量工具中执行测量过程以获得衬底失真或重叠误差图，确定计算系统中的激光能量的量化以校正 基于覆盖误差图的薄膜应力/应变变化或基板变形，以及基于确定用于校正基板变形或薄膜应力/应变变化的激光能量的剂量，向激光能量装置提供激光能量处理配方。