Invention Grant
US09484300B2 Device resulting from printing minimum width semiconductor features at non-minimum pitch
有权
由非最小间距打印最小宽度半导体特征而产生的器件
- Patent Title: Device resulting from printing minimum width semiconductor features at non-minimum pitch
- Patent Title (中): 由非最小间距打印最小宽度半导体特征而产生的器件
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Application No.: US14953864Application Date: 2015-11-30
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Publication No.: US09484300B2Publication Date: 2016-11-01
- Inventor: Sonia Ghosh , Randy Mann , Norman Chen , Shaowen Gao
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/528 ; H01L21/66 ; G06F17/50 ; H01L21/3213 ; H01L23/522 ; H01L27/11 ; H01L27/02
Abstract:
Methods for forming a semiconductor layer, such as a metal1 layer, having minimum width features separated by a distance greater than a minimum pitch, and the resulting devices are disclosed. Embodiments may include determining a first shape and a second shape having a minimum width within a semiconductor layer, wherein a distance between the first shape and the second shape is greater than a minimum pitch, determining an intervening shape between the first shape and the second shape, and designating a dummy shape within the intervening shape, wherein the dummy shape is at the minimum pitch from the first shape.
Public/Granted literature
- US20160093565A1 PRINTING MINIMUM WIDTH FEATURES AT NON-MINIMUM PITCH AND RESULTING DEVICE Public/Granted day:2016-03-31
Information query
IPC分类:
