Invention Grant
- Patent Title: Inductor shielding structure, integrated circuit including the same and method of forming the integrated circuit
- Patent Title (中): 电感器屏蔽结构,集成电路包括与集成电路相同的形成方法
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Application No.: US14600634Application Date: 2015-01-20
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Publication No.: US09484312B2Publication Date: 2016-11-01
- Inventor: Chi-Hsien Lin , Hsien-Yuan Liao , Ying-Ta Lu , Ho-Hsiang Chen , Tzu-Jin Yeh
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/552 ; H01L49/02 ; H01L23/522

Abstract:
An inductor shielding structure includes a first conductive layer including a plurality of first conductive lines having a first width and a plurality of second conductive lines having a second width. The inductor shielding structure further includes a second conductive layer over the first conductive layer. The second conductive layer includes at least one third conductive line having a third width and a plurality of fourth conductive lines having a fourth width. Each conductive line of the at least one third conductive line is parallel to each conductive line of the plurality of first conductive lines. Each conductive line of the plurality of fourth conductive lines is parallel to each conductive line of the plurality of second conductive lines. The first width is different from the second width, or the third width is different from the fourth width.
Public/Granted literature
Information query
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