Invention Grant
US09484410B2 Lateral MOS power transistor having front side drain electrode and back side source electrode
有权
侧面MOS功率晶体管，具有前侧漏电极和背侧源电极
- Patent Title: Lateral MOS power transistor having front side drain electrode and back side source electrode
- Patent Title (中): 侧面MOS功率晶体管，具有前侧漏电极和背侧源电极
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Application No.: US14642638Application Date: 2015-03-09
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Publication No.: US09484410B2Publication Date: 2016-11-01
- Inventor: Oliver Haeberlen , Franz Hirler , Maximilian Roesch
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102010020884 20100518
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/417 ; H01L29/78 ; H01L29/861 ; H01L29/06 ; H01L29/40
Abstract:
A semiconductor component may include a semiconductor layer which has a front side and a back side, a first terminal electrode on the front side, a second terminal electrode on the back side, a first dopant region of a first conduction type on the front side, which is electrically connected to one of the terminal electrodes, a second dopant region of a second conduction type in the semiconductor layer, which is electrically connected to the other terminal electrode, a pn junction being formed between the first and second dopant regions, a dielectric layer on the back side between the semiconductor layer and the second terminal electrode, and the dielectric layer having an opening through which an electrical connection between the second terminal electrode and the first or second dopant region is passed.
Public/Granted literature
- US20150187879A1 LATERAL MOS POWER TRANSISTOR HAVING BACKSIDE TERMINAL Public/Granted day:2015-07-02
Information query
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