Invention Grant
US09484440B2 Methods for forming FinFETs with non-merged epitaxial fin extensions
有权
用于形成具有非合并外延鳍扩展的FinFET的方法
- Patent Title: Methods for forming FinFETs with non-merged epitaxial fin extensions
- Patent Title (中): 用于形成具有非合并外延鳍扩展的FinFET的方法
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Application No.: US14752095Application Date: 2015-06-26
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Publication No.: US09484440B2Publication Date: 2016-11-01
- Inventor: Hong He , Shogo Mochizuki , Chiahsun Tseng , Chun-Chen Yeh , Yunpeng Yin
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , Renesas Electronics Corporation
- Applicant Address: US NY Armonk JP Kanagawa
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,RENESAS ELECTRONICS CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: US NY Armonk JP Kanagawa
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/762 ; H01L29/78 ; H01L29/66 ; H01L29/04 ; H01L27/088 ; H01L29/06 ; H01L21/02 ; H01L21/306
Abstract:
Semiconductor devices having non-merged fin extensions and methods for forming the same. Methods for forming semiconductor devices include forming fins on a substrate; forming a dummy gate over the fins, leaving a source and drain region exposed; etching the fins below a surface level of a surrounding insulator layer; and epitaxially growing fin extensions from the etched fins.
Public/Granted literature
- US20150295065A1 NON-MERGED EPITAXIALLY GROWN MOSFET DEVICES Public/Granted day:2015-10-15
Information query
IPC分类:
