Invention Grant
- Patent Title: Thin film transistor
- Patent Title (中): 薄膜晶体管
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Application No.: US14459949Application Date: 2014-08-14
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Publication No.: US09484466B2Publication Date: 2016-11-01
- Inventor: Noboru Takeuchi , Kwi Hyun Kim , Seung Soo Baek , Si Hyun Ahn
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Yongin, Gyeonggi-Do
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2014-0018054 20140217
- Main IPC: H01L29/786
- IPC: H01L29/786

Abstract:
A thin film transistor includes: a gate electrode; a source electrode; a drain electrode facing the source electrode; an oxide semiconductor layer disposed between the gate electrode and the source electrode or between the gate electrode and the drain electrode; and a gate insulating layer disposed between the gate electrode and the source electrode or between the gate electrode and the drain electrode, wherein when a signal applied to the gate electrode is a turnoff signal, a voltage applied to the gate electrode has a negative value.
Public/Granted literature
- US20150236161A1 THIN FILM TRANSISTOR Public/Granted day:2015-08-20
Information query
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