发明授权
- 专利标题: Thin film transistor and manufacturing method thereof, array substrate, and display apparatus
- 专利标题(中): 薄膜晶体管及其制造方法,阵列基板及显示装置
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申请号: US14429940申请日: 2014-07-15
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公开(公告)号: US09484468B2公开(公告)日: 2016-11-01
- 发明人: Yunqi Zhang , Sangsoo Park , Xunze Zhang , Liang Peng , Liumin Yu , Weihua Fang , Yanrui Shen , Liang Xiao , Daowu Huang , Zhiyuan Dong , Longlong Duan , Jian Wang
- 申请人: BOE TECHNOLOGY GROUP CO., LTD. , HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 申请人地址: CN Beijing CN Hefei, Anhui
- 专利权人: BOE TECHNOLOGY GROUP CO., LTD.,HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 当前专利权人: BOE TECHNOLOGY GROUP CO., LTD.,HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 当前专利权人地址: CN Beijing CN Hefei, Anhui
- 代理机构: Nath, Goldberg & Meyer
- 代理商 Joshua Goldberg; Christopher Thomas
- 优先权: CN201310500440 20131022
- 国际申请: PCT/CN2014/082241 WO 20140715
- 国际公布: WO2015/058562 WO 20150430
- 主分类号: H01L29/12
- IPC分类号: H01L29/12 ; H01L29/786 ; H01L27/12 ; H01L29/24
摘要:
The present invention provides a thin film transistor and a manufacturing method thereof, an array substrate, and a display apparatus. The thin film transistor of the present invention comprises a gate, a gate insulation layer, a semiconductor active region, and a source and a drain connected with the semiconductor active region, and further comprises a surface charge transfer layer in contact with the semiconductor active region, the surface charge transfer layer is located above or below the semiconductor active region, and is used for causing the semiconductor active region to generate a large number of holes or electrons therein without changing the lattice structure of the semiconductor active region. In the thin film transistor, charge transfer occurs between the semiconductor active region and the surface charge transfer layer so that the doped semiconductor active region is formed, thus the performance of the thin film transistor is significantly improved.
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