公开(公告)号：US09484468B2

公开(公告)日：2016-11-01

申请号：US14429940

申请日：2014-07-15

申请人： BOE TECHNOLOGY GROUP CO., LTD. ,  HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

发明人： Yunqi Zhang ,  Sangsoo Park ,  Xunze Zhang ,  Liang Peng ,  Liumin Yu ,  Weihua Fang ,  Yanrui Shen ,  Liang Xiao ,  Daowu Huang ,  Zhiyuan Dong ,  Longlong Duan ,  Jian Wang

IPC分类号： H01L29/12 ,  H01L29/786 ,  H01L27/12 ,  H01L29/24

CPC分类号： H01L29/78696 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/24 ,  H01L29/7869

摘要： The present invention provides a thin film transistor and a manufacturing method thereof, an array substrate, and a display apparatus. The thin film transistor of the present invention comprises a gate, a gate insulation layer, a semiconductor active region, and a source and a drain connected with the semiconductor active region, and further comprises a surface charge transfer layer in contact with the semiconductor active region, the surface charge transfer layer is located above or below the semiconductor active region, and is used for causing the semiconductor active region to generate a large number of holes or electrons therein without changing the lattice structure of the semiconductor active region. In the thin film transistor, charge transfer occurs between the semiconductor active region and the surface charge transfer layer so that the doped semiconductor active region is formed, thus the performance of the thin film transistor is significantly improved.

摘要翻译： 本发明提供一种薄膜晶体管及其制造方法，阵列基板和显示装置。 本发明的薄膜晶体管包括栅极，栅极绝缘层，半导体有源区以及与半导体有源区连接的源极和漏极，并且还包括与半导体有源区域接触的表面电荷转移层 表面电荷转移层位于半导体有源区的上方或下方，并且用于使半导体有源区在其中产生大量的空穴或电子而不改变半导体有源区的晶格结构。 在薄膜晶体管中，在半导体有源区和表面电荷转移层之间发生电荷转移，从而形成掺杂的半导体有源区，从而显着提高薄膜晶体管的性能。