Invention Grant
US09487391B2 Micro-electro mechanical system (MEMS) device having a blocking layer formed between closed chamber and a dielectric layer of a CMOS substrate
有权
微机电系统(MEMS)器件具有形成在封闭腔室和CMOS衬底介质层之间的阻挡层
- Patent Title: Micro-electro mechanical system (MEMS) device having a blocking layer formed between closed chamber and a dielectric layer of a CMOS substrate
- Patent Title (中): 微机电系统(MEMS)器件具有形成在封闭腔室和CMOS衬底介质层之间的阻挡层
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Application No.: US14084161Application Date: 2013-11-19
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Publication No.: US09487391B2Publication Date: 2016-11-08
- Inventor: Chun-Wen Cheng , Chia-Hua Chu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: JP Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: JP Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: B81B7/02
- IPC: B81B7/02 ; B81C1/00

Abstract:
Embodiments of mechanisms for forming a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a CMOS substrate, a cap substrate, and a MEMS substrate bonded between the CMOS substrate and the cap substrate. The MEMS substrate includes a first movable element and a second movable element. The MEMS device also includes a first closed chamber and a second closed chamber, which are between the MEMS substrate and the cap substrate. The first movable element is in the first closed chamber, and the second movable element is in the second closed chamber. A first pressure of the first closed chamber is higher than a second pressure of the second closed chamber.
Public/Granted literature
- US20150137276A1 MECHANISMS FOR FORMING MICRO-ELECTRO MECHANICAL SYSTEM DEVICE Public/Granted day:2015-05-21
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