发明授权
- 专利标题： Non-melt thin-wafer laser thermal annealing methods
- 专利标题（中）： 非熔化薄晶片激光热退火方法
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申请号： US13595873申请日： 2012-08-27
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公开(公告)号： US09490128B2公开(公告)日： 2016-11-08
- 发明人: Yun Wang , Andrew M. Hawryluk , Xiaoru Wang , Xiaohua Shen
- 申请人： Yun Wang , Andrew M. Hawryluk , Xiaoru Wang , Xiaohua Shen
- 申请人地址： US CA San Jose
- 专利权人： Ultratech, Inc.
- 当前专利权人： Ultratech, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Opticus IP Law PLLC
- 主分类号： H01L21/268
- IPC分类号： H01L21/268 ; H01L27/146 ; H01L21/02 ; H01L21/285
摘要：
Methods of annealing a thin semiconductor wafer are disclosed. The methods allow for high-temperature annealing of one side of a thin semiconductor wafer without damaging or overheating heat-sensitive electronic device features that are either on the other side of the wafer or embedded within the wafer. The annealing is performed at a temperature below the melting point of the wafer so that no significant dopant redistribution occurs during the annealing process. The methods can be applied to activating dopants or to forming ohmic contacts.
公开/授权文献
- US20140057457A1 Non-melt thin-wafer laser thermal annealing methods 公开/授权日：2014-02-27
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