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公开(公告)号:US20140057457A1
公开(公告)日:2014-02-27
申请号:US13595873
申请日:2012-08-27
申请人: Yun Wang , Andrew M. Hawryluk , Xiaoru Wang , Xiaohua Shen
发明人: Yun Wang , Andrew M. Hawryluk , Xiaoru Wang , Xiaohua Shen
IPC分类号: H01L21/268 , H01L21/02
CPC分类号: H01L21/268 , H01L21/02107 , H01L21/28518 , H01L27/14634 , H01L27/1469
摘要: Methods of annealing a thin semiconductor wafer are disclosed. The methods allow for high-temperature annealing of one side of a thin semiconductor wafer without damaging or overheating heat-sensitive electronic device features that are either on the other side of the wafer or embedded within the wafer. The annealing is performed at a temperature below the melting point of the wafer so that no significant dopant redistribution occurs during the annealing process. The methods can be applied to activating dopants or to forming ohmic contacts.
摘要翻译: 公开了薄半导体晶片的退火方法。 该方法允许薄半导体晶片的一侧进行高温退火,而不会损坏或过热晶片另一侧或嵌入晶片内的热敏电子器件特征。 在低于晶片的熔点的温度下进行退火,使得在退火过程中不会发生显着的掺杂剂再分布。 该方法可用于活化掺杂剂或形成欧姆接触。
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公开(公告)号:US09490128B2
公开(公告)日:2016-11-08
申请号:US13595873
申请日:2012-08-27
申请人: Yun Wang , Andrew M. Hawryluk , Xiaoru Wang , Xiaohua Shen
发明人: Yun Wang , Andrew M. Hawryluk , Xiaoru Wang , Xiaohua Shen
IPC分类号: H01L21/268 , H01L27/146 , H01L21/02 , H01L21/285
CPC分类号: H01L21/268 , H01L21/02107 , H01L21/28518 , H01L27/14634 , H01L27/1469
摘要: Methods of annealing a thin semiconductor wafer are disclosed. The methods allow for high-temperature annealing of one side of a thin semiconductor wafer without damaging or overheating heat-sensitive electronic device features that are either on the other side of the wafer or embedded within the wafer. The annealing is performed at a temperature below the melting point of the wafer so that no significant dopant redistribution occurs during the annealing process. The methods can be applied to activating dopants or to forming ohmic contacts.
摘要翻译: 公开了薄半导体晶片的退火方法。 该方法允许对薄半导体晶片的一侧进行高温退火,而不会损坏或过热晶片另一侧或嵌入晶片内的热敏电子器件特征。 在低于晶片的熔点的温度下进行退火,使得在退火过程中不会发生显着的掺杂剂再分布。 该方法可用于活化掺杂剂或形成欧姆接触。
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公开(公告)号:US07354389B2
公开(公告)日:2008-04-08
申请号:US10509985
申请日:2003-05-28
IPC分类号: C40B60/08
CPC分类号: G01N35/00732 , B01J2219/00576 , B01J2219/00659 , B01J2219/00702 , G01N21/253 , G01N21/6428 , G01N21/6452 , G01N35/1016 , G01N2035/00158 , G01N2035/00673 , G01N2035/00782 , G01N2035/1025
摘要: A detector for optical analysis of a biochip determines the focal position of a plurality of analytes on the biochip using one or more registration markers on the biochip, wherein the analytes and the registration marker are illuminated by different light sources. Therefore, contemplated configurations will significantly reduce overall focusing time and automate proper positioning of the biochip, while allowing to determine a focal position without photobleaching or other undesirable effects on optically labile compounds. Thus, automated analyses can be performed without manual user intervention.
摘要翻译: 用于生物芯片的光学分析的检测器使用生物芯片上的一个或多个配准标记来确定生物芯片上的多个分析物的焦点位置,其中分析物和对准标记物被不同的光源照射。 因此,预期的配置将显着减少整体聚焦时间并自动化生物芯片的适当定位,同时允许确定焦点位置而不进行光漂白或其它对光学不稳定化合物的不期望的影响。 因此,可以执行自动化分析,而无需手动用户干预。
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公开(公告)号:US20130196455A1
公开(公告)日:2013-08-01
申请号:US13359936
申请日:2012-01-27
申请人: Xiaohua Shen , Yun Wang , Xiaoru Wang
发明人: Xiaohua Shen , Yun Wang , Xiaoru Wang
IPC分类号: H01L21/66 , H05B1/00 , H01L21/263
CPC分类号: H01L21/2636 , B23K26/0608 , B23K26/0732 , B23K26/08 , B23K2101/40 , G01N21/55 , H01L21/268 , H01L21/324 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要: Systems and methods are disclosed for performing laser annealing in a manner that reduces or minimizes wafer surface temperature variations during the laser annealing process. The systems and methods include annealing the wafer surface with first and second laser beams that represent preheat and anneal laser beams having respective first and second intensities. The preheat laser beam brings the wafer surface temperate close to the annealing temperature and the anneal laser beam brings the wafer surface temperature up to the annealing temperature. The anneal laser beam can have a different wavelength, or the same wavelength but different orientation relative to the wafer surface. Reflectivity maps of the wafer surface at the preheat and anneal wavelengths are measured and used to select first and second intensities that ensure good anneal temperature uniformity as a function of wafer position.
摘要翻译: 公开了以在减少或最小化激光退火过程中的晶片表面温度变化的方式进行激光退火的系统和方法。 这些系统和方法包括用表示具有相应的第一和第二强度的预热和退火激光束的第一和第二激光束退火晶片表面。 预热激光束使晶片表面温度接近退火温度,退火激光束使晶片表面温度达到退火温度。 退火激光束可以具有相对于晶片表面的不同波长或相同波长但不同的取向。 在预热和退火波长处的晶片表面的反射率图被测量并用于选择第一和第二强度,其确保作为晶片位置的函数的良好的退火温度均匀性。
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公开(公告)号:US20050118640A1
公开(公告)日:2005-06-02
申请号:US10509985
申请日:2003-05-28
申请人: Fareed Kureshy , Vijay Mahant , Shailendra Singh , Xiaohua Shen
发明人: Fareed Kureshy , Vijay Mahant , Shailendra Singh , Xiaohua Shen
CPC分类号: G01N35/00732 , B01J2219/00576 , B01J2219/00659 , B01J2219/00702 , G01N21/253 , G01N21/6428 , G01N21/6452 , G01N35/1016 , G01N2035/00158 , G01N2035/00673 , G01N2035/00782 , G01N2035/1025
摘要: A detector for optical analysis of a biochip determines the focal position of a plurality of analytes on the biochip using one or more registration markers on the biochip, wherein the analytes and the registration marker are illuminated by different light sources. Therefore, contemplated configurations will significantly reduce overall focusing time and automate proper positioning of the biochip, while allowing to determine a focal position without photobleaching or other undesirable effects on optically labile compounds. Thus, automated analyses can be performed without manual user intervention.
摘要翻译: 用于生物芯片的光学分析的检测器使用生物芯片上的一个或多个配准标记来确定生物芯片上的多个分析物的焦点位置,其中分析物和对准标记物被不同的光源照射。 因此,预期的配置将显着减少整体聚焦时间并自动化生物芯片的适当定位,同时允许确定焦点位置而不进行光漂白或其它对光学不稳定化合物的不期望的影响。 因此,可以执行自动化分析,而无需手动用户干预。
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公开(公告)号:US08546805B2
公开(公告)日:2013-10-01
申请号:US13359936
申请日:2012-01-27
申请人: Xiaohua Shen , Yun Wang , Xiaoru Wang
发明人: Xiaohua Shen , Yun Wang , Xiaoru Wang
IPC分类号: H01L29/04 , H01L31/20 , H01L31/036 , H01L31/0376
CPC分类号: H01L21/2636 , B23K26/0608 , B23K26/0732 , B23K26/08 , B23K2101/40 , G01N21/55 , H01L21/268 , H01L21/324 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要: Systems and methods are disclosed for performing laser annealing in a manner that reduces or minimizes wafer surface temperature variations during the laser annealing process. The systems and methods include annealing the wafer surface with first and second laser beams that represent preheat and anneal laser beams having respective first and second intensities. The preheat laser beam brings the wafer surface temperate close to the annealing temperature and the anneal laser beam brings the wafer surface temperature up to the annealing temperature. The anneal laser beam can have a different wavelength, or the same wavelength but different orientation relative to the wafer surface. Reflectivity maps of the wafer surface at the preheat and anneal wavelengths are measured and used to select first and second intensities that ensure good anneal temperature uniformity as a function of wafer position.
摘要翻译: 公开了以在减少或最小化激光退火过程中的晶片表面温度变化的方式进行激光退火的系统和方法。 这些系统和方法包括用表示具有相应的第一和第二强度的预热和退火激光束的第一和第二激光束退火晶片表面。 预热激光束使晶片表面温度接近退火温度,退火激光束使晶片表面温度达到退火温度。 退火激光束可以具有相对于晶片表面的不同波长或相同波长但不同的取向。 在预热和退火波长处的晶片表面的反射率图被测量并用于选择第一和第二强度,其确保作为晶片位置的函数的良好的退火温度均匀性。
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