Invention Grant
- Patent Title: Photo mask and method of manufacturing thin film transistor using the same
- Patent Title (中): 使用其制造薄膜晶体管的光掩模和方法
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Application No.: US14740378Application Date: 2015-06-16
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Publication No.: US09490278B2Publication Date: 2016-11-08
- Inventor: Kwang-Woo Park , Jeong-Won Kim , Jun-Hyuk Woo , Gwui-Hyun Park , Jin-Ho Ju
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin, Gyeonggi-Do
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2015-0001361 20150106
- Main IPC: H01L27/32
- IPC: H01L27/32 ; H01L27/12 ; G02B5/30 ; G02B1/08 ; G02F1/13 ; G03F1/38
Abstract:
According to an exemplary embodiment of the present invention, a photomask includes a transparent substrate and a polarizing pattern. A polarizing pattern is disposed on a transparent substrate. The polarizing pattern polarize light.
Public/Granted literature
- US20160197106A1 PHOTO MASK AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR USING THE SAME Public/Granted day:2016-07-07
Information query
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