- 专利标题: Photoelectric conversion device and method for producing photoelectric conversion device
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申请号: US14339765申请日: 2014-07-24
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公开(公告)号: US09490286B2公开(公告)日: 2016-11-08
- 发明人: Sakae Hashimoto
- 申请人: CANON KABUSHIKI KAISHA
- 申请人地址: JP Tokyo
- 专利权人: CANON KABUSHIKI KAISHA
- 当前专利权人: CANON KABUSHIKI KAISHA
- 当前专利权人地址: JP Tokyo
- 代理机构: Fitzpatrick, Cella, Harper & Scinto
- 优先权: JP2004-355364 20041208
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L27/146 ; H01L31/0232
摘要:
A photoelectric conversion device according to the present invention has a plurality of photoreceiving portions provided in a substrate, an interlayer film overlying the photoreceiving portion, a large refractive index region which is provided so as to correspond to the photoreceiving portion and has a higher refractive index than the interlayer film, and a layer which is provided in between the photoreceiving portion and the large refractive index region, and has a lower etching rate than the interlayer film, wherein the layer of the lower etching rate is formed so as to cover at least the whole surface of the photoreceiving portion. In addition, the layer of the lower etching rate has a refractive index in between the refractive indices of the large refractive index region and the substrate. Such a configuration can provide the photoelectric conversion device which inhibits the lowering of the sensitivity and the variation of the sensitivity among picture elements.
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