发明授权
- 专利标题： Fabrication methodology for optoelectronic integrated circuits
- 专利标题（中）： 光电集成电路的制作方法
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申请号： US14736552申请日： 2015-06-11
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公开(公告)号： US09490336B1公开(公告)日： 2016-11-08
- 发明人: Geoff W. Taylor
- 申请人： Opel Solar, Inc. , The University of Connecticut
- 申请人地址： US CT Storrs Mansfield US CT Farmington
- 专利权人： Opel Solar, Inc.,THE UNIVERSITY OF CONNECTICUT
- 当前专利权人： Opel Solar, Inc.,THE UNIVERSITY OF CONNECTICUT
- 当前专利权人地址： US CT Storrs Mansfield US CT Farmington
- 代理机构： Sughrue Mion, PLLC
- 主分类号： H01L29/45
- IPC分类号： H01L29/45 ; H01L21/324 ; H01L21/3213 ; H01L29/40 ; H01L29/205 ; H01L29/15
摘要：
A method of forming an integrated circuit includes depositing a multilayer metal stack on at least one contact layer of semiconductor material. The multilayer metal stack includes a bottom interface layer formed by a combination of indium and at least one high temperature metal on the at least one contact layer of semiconductor material, at least one barrier layer formed on the bottom interface layer, and a layer formed from at least one high temperature metal on the at least one barrier layer. The metal stack is heated such that indium of the bottom interface layer forms a low resistance interface to contact layer. The at least one barrier layer functions as a barrier to diffusion of indium from the bottom interface layer. Subsequent to the heating, the resultant multilayer metal stack can be patterned to form at least one electrode for a given device of the integrated circuit.