Invention Grant
US09496143B2 Metal gate structure for midgap semiconductor device and method of making same
有权
中间半导体器件的金属栅极结构及其制造方法
- Patent Title: Metal gate structure for midgap semiconductor device and method of making same
- Patent Title (中): 中间半导体器件的金属栅极结构及其制造方法
-
Application No.: US13670251Application Date: 2012-11-06
-
Publication No.: US09496143B2Publication Date: 2016-11-15
- Inventor: Hoon Kim , Kisik Choi
- Applicant: GLOBALFOUNDRIES, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent Wayne E. Reinke, Esq.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/8222 ; H01L21/28 ; H01L29/49
Abstract:
A PFET-based semiconductor gate structure providing a midgap work function for threshold voltage control between that of a NFET and a PFET is created by including an annealed layer of relatively thick TiN to dominate and shift the overall work function down from that of PFET. The structure has a PFET base covered with a high-k dielectric, a layer of annealed TiN, a layer of unannealed TiN, a thin barrier over the unannealed TiN, and n-type metal over the thin barrier.
Public/Granted literature
- US20140124876A1 METAL GATE STRUCTURE FOR MIDGAP SEMICONDUCTOR DEVICE AND METHOD OF MAKING SAME Public/Granted day:2014-05-08
Information query
IPC分类:
