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US09496198B2 Integration of backside heat spreader for thermal management 有权
背面散热器集成用于热管理

Integration of backside heat spreader for thermal management
Abstract:
A microelectronic device includes semiconductor device with a component at a front surface of the semiconductor device and a backside heat spreader layer on a back surface of the semiconductor device. The backside heat spreader layer is 100 nanometers to 3 microns thick, has an in-plane thermal conductivity of at least 150 watts/meter-° K, and an electrical resistivity less than 100 micro-ohm-centimeters.
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