Invention Grant
- Patent Title: Integrated circuit and method of manufacturing an integrated circuit
- Patent Title (中): 集成电路和集成电路制造方法
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Application No.: US14987820Application Date: 2016-01-05
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Publication No.: US09496228B2Publication Date: 2016-11-15
- Inventor: Edward Fuergut , Joachim Mahler , Ivan Nikitin
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Priority: DE102015100868 20150121
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/495 ; H01L23/31 ; H01L21/48 ; H01L21/56 ; H01L21/78
Abstract:
In various embodiments, an integrated circuit is provided. The integrated circuit may include a semiconductor chip and an electrically conductive composite material fixed to the semiconductor chip, wherein the electrically conductive composite material may include a metal, and wherein a coefficient of thermal expansion (CTE) value of the electrically conductive composite material may be lower than the CTE value of the metal.
Public/Granted literature
- US20160211226A1 INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT Public/Granted day:2016-07-21
Information query
IPC分类:
