Invention Grant
- Patent Title: Semiconductor device and driving method thereof
- Patent Title (中): 半导体装置及其驱动方法
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Application No.: US14962809Application Date: 2015-12-08
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Publication No.: US09496285B2Publication Date: 2016-11-15
- Inventor: Shuhei Nagatsuka
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2014-249820 20141210
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786

Abstract:
The semiconductor device includes a transistor, first to N-th switches (N is a natural number of three or more), and first to (N−1)-th capacitors. A first terminal of the first capacitor (or a J-th capacitor) is electrically connected to a gate of the transistor (or a second terminal of a (J−1)-th capacitor (J is a natural number of two or more and (N−1) or less)). A first (or K-th) potential is supplied to the gate of the transistor through the first switch (or a second terminal of a (K−1)-th capacitor through a K-th switch (K is a natural number of two or more and N or less)). A capacitance value of the first capacitor is preferably equal to a gate capacitance value of the transistor, and a capacitance value of the J-th capacitor is preferably equal to a capacitance value of the (J−1)-th capacitor.
Public/Granted literature
- US20160172383A1 Semiconductor Device and Driving Method Thereof Public/Granted day:2016-06-16
Information query
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