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US09496285B2 Semiconductor device and driving method thereof 有权
半导体装置及其驱动方法

Semiconductor device and driving method thereof
摘要:
The semiconductor device includes a transistor, first to N-th switches (N is a natural number of three or more), and first to (N−1)-th capacitors. A first terminal of the first capacitor (or a J-th capacitor) is electrically connected to a gate of the transistor (or a second terminal of a (J−1)-th capacitor (J is a natural number of two or more and (N−1) or less)). A first (or K-th) potential is supplied to the gate of the transistor through the first switch (or a second terminal of a (K−1)-th capacitor through a K-th switch (K is a natural number of two or more and N or less)). A capacitance value of the first capacitor is preferably equal to a gate capacitance value of the transistor, and a capacitance value of the J-th capacitor is preferably equal to a capacitance value of the (J−1)-th capacitor.
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