发明授权
- 专利标题: Semiconductor device and driving method thereof
- 专利标题(中): 半导体装置及其驱动方法
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申请号: US14962809申请日: 2015-12-08
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公开(公告)号: US09496285B2公开(公告)日: 2016-11-15
- 发明人: Shuhei Nagatsuka
- 申请人: Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址: JP
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP
- 代理机构: Husch Blackwell LLP
- 优先权: JP2014-249820 20141210
- 主分类号: H01L27/12
- IPC分类号: H01L27/12 ; H01L29/786
摘要:
The semiconductor device includes a transistor, first to N-th switches (N is a natural number of three or more), and first to (N−1)-th capacitors. A first terminal of the first capacitor (or a J-th capacitor) is electrically connected to a gate of the transistor (or a second terminal of a (J−1)-th capacitor (J is a natural number of two or more and (N−1) or less)). A first (or K-th) potential is supplied to the gate of the transistor through the first switch (or a second terminal of a (K−1)-th capacitor through a K-th switch (K is a natural number of two or more and N or less)). A capacitance value of the first capacitor is preferably equal to a gate capacitance value of the transistor, and a capacitance value of the J-th capacitor is preferably equal to a capacitance value of the (J−1)-th capacitor.
公开/授权文献
- US20160172383A1 Semiconductor Device and Driving Method Thereof 公开/授权日:2016-06-16
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