Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14854789Application Date: 2015-09-15
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Publication No.: US09496376B2Publication Date: 2016-11-15
- Inventor: Shunpei Yamazaki , Tetsuhiro Tanaka , Sachiaki Tezuka , Mitsuhiro Ichijo , Noriyoshi Suzuki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2014-191293 20140919
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/786 ; H01L21/16 ; H01L21/06 ; H01L29/24 ; H01L27/115

Abstract:
To provide a semiconductor device with improved reliability. To provide a semiconductor device with stable characteristics. To provide a transistor having a low off-state current. To provide a transistor having a high on-state current. To provide a novel semiconductor device, a novel electronic device, or the like. A method for manufacturing the semiconductor device includes the steps of forming a first semiconductor over a substrate; forming a second semiconductor over and in contact with the first semiconductor; forming a first layer over the second semiconductor; performing oxygen plasma treatment and then removing the first layer to expose at least part of a surface of the second semiconductor; forming a third semiconductor over and in contact with the second semiconductor; forming a first insulator over and in contact with the third semiconductor; and forming a first conductor over the first insulator.
Public/Granted literature
- US20160087085A1 Method for Manufacturing Semiconductor Device Public/Granted day:2016-03-24
Information query
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