公开(公告)号：US10192997B2

公开(公告)日：2019-01-29

申请号：US15879784

申请日：2018-01-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kosei Noda ,  Noriyoshi Suzuki

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/423 ,  H01L29/66

Abstract: A highly reliable semiconductor device having stable electric characteristics is provided by suppressing, in a transistor including an oxide semiconductor film, diffusion of indium into an insulating film in contact with the oxide semiconductor film and improving the characteristics of the interface between the oxide semiconductor film and the insulating film. In an oxide semiconductor film containing indium, the indium concentration at a surface is decreased, thereby preventing diffusion of indium into an insulating film on and in contact with the oxide semiconductor film. By decreasing the indium concentration at the surface of the oxide semiconductor film, a layer which does not substantially contain indium can be formed at the surface. By using this layer as part of the insulating film, the characteristics of the interface between the oxide semiconductor film and the insulating film in contact with the oxide semiconductor film are improved.

公开(公告)号：US09786495B2

公开(公告)日：2017-10-10

申请号：US14855648

申请日：2015-09-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa Shimomura ,  Naoki Okuno ,  Mitsuhiro Ichijo ,  Noriyoshi Suzuki ,  Tetsuhiro Tanaka ,  Sachiaki Tezuka

IPC: H01L21/02 ,  H01L21/66 ,  H01J37/32 ,  C23C14/08 ,  C23C14/58

CPC classification number: H01L21/0234 ,  C23C14/08 ,  C23C14/5806 ,  C23C14/5826 ,  C23C14/5853 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L22/12

Abstract: A method for evaluating a semiconductor film of a semiconductor device which is configured to include an insulating film, the semiconductor film, and a conductive film and to have a region where the semiconductor film and the conductive film overlap with each other with the insulating film provided therebetween, includes a step of performing plasma treatment after formation of the insulating film, and a step of calculating a peak value of resistivity of a microwave in the semiconductor film by a microwave photoconductive decay method after the plasma treatment, so that the hydrogen concentration in the semiconductor film is estimated.

公开(公告)号：US09929280B2

公开(公告)日：2018-03-27

申请号：US15240332

申请日：2016-08-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kosei Noda ,  Noriyoshi Suzuki

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L21/02 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02664 ,  H01L29/42384 ,  H01L29/66969

Abstract: A highly reliable semiconductor device having stable electric characteristics is provided by suppressing, in a transistor including an oxide semiconductor film, diffusion of indium into an insulating film in contact with the oxide semiconductor film and improving the characteristics of the interface between the oxide semiconductor film and the insulating film. In an oxide semiconductor film containing indium, the indium concentration at a surface is decreased, thereby preventing diffusion of indium into an insulating film on and in contact with the oxide semiconductor film. By decreasing the indium concentration at the surface of the oxide semiconductor film, a layer which does not substantially contain indium can be formed at the surface. By using this layer as part of the insulating film, the characteristics of the interface between the oxide semiconductor film and the insulating film in contact with the oxide semiconductor film are improved.

公开(公告)号：US09496376B2

公开(公告)日：2016-11-15

申请号：US14854789

申请日：2015-09-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Sachiaki Tezuka ,  Mitsuhiro Ichijo ,  Noriyoshi Suzuki

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/16 ,  H01L21/06 ,  H01L29/24 ,  H01L27/115

CPC classification number: H01L29/66969 ,  H01L21/06 ,  H01L21/16 ,  H01L27/1156 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device with improved reliability. To provide a semiconductor device with stable characteristics. To provide a transistor having a low off-state current. To provide a transistor having a high on-state current. To provide a novel semiconductor device, a novel electronic device, or the like. A method for manufacturing the semiconductor device includes the steps of forming a first semiconductor over a substrate; forming a second semiconductor over and in contact with the first semiconductor; forming a first layer over the second semiconductor; performing oxygen plasma treatment and then removing the first layer to expose at least part of a surface of the second semiconductor; forming a third semiconductor over and in contact with the second semiconductor; forming a first insulator over and in contact with the third semiconductor; and forming a first conductor over the first insulator.

Abstract translation: 提供具有改善的可靠性的半导体器件。 提供具有稳定特性的半导体器件。 提供具有低截止电流的晶体管。 提供具有高导通电流的晶体管。 提供新颖的半导体器件，新颖的电子器件等。 一种制造半导体器件的方法包括以下步骤：在衬底上形成第一半导体; 在第一半导体之上形成第二半导体，并与第一半导体接触; 在所述第二半导体上形成第一层; 执行氧等离子体处理，然后去除第一层以暴露第二半导体的表面的至少一部分; 在所述第二半导体上形成第三半导体并与其接触; 在第三半导体上形成第一绝缘体并与第三半导体接触; 以及在所述第一绝缘体上形成第一导体。