Invention Grant
US09502124B2 Nonvolatile memory device and method controlling word line setup time based on difference in setup voltage levels
有权
非易失性存储器件和方法基于设置电压电平差异来控制字线建立时间
- Patent Title: Nonvolatile memory device and method controlling word line setup time based on difference in setup voltage levels
- Patent Title (中): 非易失性存储器件和方法基于设置电压电平差异来控制字线建立时间
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Application No.: US14322335Application Date: 2014-07-02
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Publication No.: US09502124B2Publication Date: 2016-11-22
- Inventor: Sang-Won Park , Dongkyo Shim , Kitae Park , Sang-Won Shim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2013-0111390 20130916
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C16/04 ; G11C8/08 ; G11C11/56 ; G11C16/08 ; G11C29/02
Abstract:
A nonvolatile memory device includes a voltage generator that sequentially provides a first setup voltage and second setup voltage to a word line of a memory cell array, and control logic including a time control unit that determines a word line setup time for the word line in relation to the second setup voltage based on a difference between the first and second setup voltages.
Public/Granted literature
- US20150078095A1 NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATION Public/Granted day:2015-03-19
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