Invention Grant
- Patent Title: RPS assisted RF plasma source for semiconductor processing
- Patent Title (中): RPS辅助RF等离子体源进行半导体处理
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Application No.: US14603638Application Date: 2015-01-23
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Publication No.: US09502218B2Publication Date: 2016-11-22
- Inventor: Xinglong Chen , Saurabh Garg , Jang-Gyoo Yang
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01J37/32
- IPC: H01J37/32 ; C23C16/505 ; C23C16/455 ; H01L21/66 ; C23C16/452 ; C23C16/517 ; H01L43/12 ; H01L27/115 ; H01L21/316 ; H01L49/02

Abstract:
Embodiments of the disclosure generally relate to a hybrid plasma processing system incorporating a remote plasma source (RPS) unit with a capacitively coupled plasma (CCP) unit for substrate processing. In one embodiment, the hybrid plasma processing system includes a CCP unit, comprising a lid having one or more through holes, and an ion suppression element, wherein the lid and the ion suppression element define a plasma excitation region, a RPS unit coupled to the CCP unit, and a gas distribution plate disposed between the ion suppression element and a substrate support, wherein the gas distribution plate and the substrate support defines a substrate processing region. In cases where process requires higher power, both CCP and RPS units may be used to generate plasma excited species so that some power burden is shifted from the CCP unit to the RPS unit, which allows the CCP unit to operate at lower power.
Public/Granted literature
- US20150221479A1 RPS ASSISTED RF PLASMA SOURCE FOR SEMICONDUCTOR PROCESSING Public/Granted day:2015-08-06
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