发明授权
- 专利标题: Magnetron sputtering target and method for manufacturing the same
- 专利标题(中): 磁控溅射靶及其制造方法
-
申请号: US14357852申请日: 2012-10-12
-
公开(公告)号: US09502224B2公开(公告)日: 2016-11-22
- 发明人: Takanobu Miyashita , Yasuyuki Goto
- 申请人: TANAKA KIKINZOKU KOGYO K.K.
- 申请人地址: JP Tokyo
- 专利权人: TANAKA KIKINZOKU KOGYO K.K.
- 当前专利权人: TANAKA KIKINZOKU KOGYO K.K.
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff PLC
- 优先权: JP2011-252103 20111117
- 国际申请: PCT/JP2012/076395 WO 20121012
- 国际公布: WO2013/073323 WO 20130523
- 主分类号: C23C14/34
- IPC分类号: C23C14/34 ; H01J37/34 ; B22F3/00 ; C22C1/04 ; C22C1/05 ; C22C5/04 ; C22C19/07 ; C22C27/06 ; G11B5/851 ; B22F3/14 ; H01F41/18
摘要:
Provided is a magnetron sputtering target having a ferromagnetic metal element. This magnetron sputtering target includes: a magnetic phase containing the ferromagnetic metal element; a plurality of non-magnetic phases that each contain the ferromagnetic metal element and that are different in constituent elements or a content ratio of constituent elements; and an oxide phase. At least one of the plurality of non-magnetic phases is more finely interdispersed with the oxide phase than the magnetic phase.
公开/授权文献
信息查询
IPC分类: