Invention Grant
- Patent Title: Thin film transistor, method for manufacturing the same, array substrate and display device
- Patent Title (中): 薄膜晶体管,其制造方法,阵列基板和显示装置
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Application No.: US13991729Application Date: 2012-12-13
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Publication No.: US09502235B2Publication Date: 2016-11-22
- Inventor: Zhanfeng Cao , Xuehui Zhang
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Ladas & Parry LLP
- Priority: CN201210047937 20120227
- International Application: PCT/CN2012/086501 WO 20121213
- International Announcement: WO2013/127229 WO 20130906
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/786 ; H01L27/12 ; H01L29/66

Abstract:
According to embodiments of the invention, a thin film transistor (TFT), a manufacturing method of the TFT, an array substrate and a display device are provided. The manufacturing method of the TFT comprises: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate formed with the gate electrode; forming an oxide semiconductor active layer, an etch stop layer and a source/drain electrode on the gate insulating layer, wherein the etch stop layer is obtained by an oxidation treatment.
Public/Granted literature
- US20140061634A1 THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE Public/Granted day:2014-03-06
Information query
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