Invention Grant
- Patent Title: Method for forming a semiconductor structure
- Patent Title (中): 半导体结构的形成方法
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Application No.: US14599559Application Date: 2015-01-19
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Publication No.: US09502260B2Publication Date: 2016-11-22
- Inventor: Shih-An Huang , Kun-Hsien Lee
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: CN201410848526 20141231
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L29/78 ; H01L29/66

Abstract:
The present invention provides a method for forming a semiconductor structure, including: firstly, providing a substrate, a fin structure being disposed on the substrate, a gate structure crossing over the fin structure, and a first hard mask being disposed on the top surface of the gate structure. Next, a dielectric layer is formed, covering the substrate, the fin structure and the gate structure. Afterwards, a second hard mask is formed on the top surface of the first hard mask, where the width of the second hard mask is larger than the width of the first hard mask, a bottom surface of the second hard mask and a top surface of the first hard mask are on the same level. An etching process is then performed to remove parts of the dielectric and parts of the fin structure.
Public/Granted literature
- US20160189970A1 METHOD FOR FORMING A SEMICONDUCTOR STRUCTURE Public/Granted day:2016-06-30
Information query
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