Metal thin film resistor and process

Invention Grant

US09502284B2 Metal thin film resistor and process 有权

Title translation: 金属薄膜电阻和工艺

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Patent Title: Metal thin film resistor and process
Patent Title (中): 金属薄膜电阻和工艺
Application No.: US14548812

Application Date: 2014-11-20
Publication No.: US09502284B2

Publication Date: 2016-11-22
Inventor: Abbas Ali , Eric Beach
Applicant: Texas Instruments Incorporated
Applicant Address: US TX Dallas
Assignee: TEXAS INSTRUMENTS INCORPORATED
Current Assignee: TEXAS INSTRUMENTS INCORPORATED
Current Assignee Address: US TX Dallas
Agent Gregory J. Albin; Frank D. Cimino
Main IPC: H01L21/768
IPC: H01L21/768 ; H01L23/522 ; H01L23/528 ; H01L49/02 ; H01L23/532

Abstract:

An integrated circuit with a metal thin film resistor with an overlying etch stop layer. A process for forming a metal thin film resistor in an integrated circuit with the addition of one lithography step.

Abstract(Chinese):

具有金属薄膜电阻器的集成电路，具有上覆蚀刻停止层。一种通过添加一个光刻步骤在集成电路中形成金属薄膜电阻器的工艺。

Public/Granted literature

US20150187632A1 METAL THIN FILM RESISTOR AND PROCESS Public/Granted day:2015-07-02

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/71	..限定在组H01L21／70中的器件的特殊部件的制造（H01L21/28，H01L21/44，H01L21/48优先）
H01L21/768	...利用互连在器件中的分离元件间传输电流