Invention Grant
- Patent Title: Adjacent device isolation
- Patent Title (中): 相邻设备隔离
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Application No.: US14633011Application Date: 2015-02-26
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Publication No.: US09502414B2Publication Date: 2016-11-22
- Inventor: Vladimir Machkaoutsan , Mustafa Badaroglu , Jeffrey Junhao Xu , Stanley Seungchul Song , Choh Fei Yeap
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: US CA San Diego
- Agency: Seyfarth Shaw LLP
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/8238 ; H01L29/423 ; H01L29/06 ; H01L21/3213 ; H01L21/321
Abstract:
An integrated circuit (IC) device may include a first active transistor of a first-type in a first-type region. The first active transistor may have a first-type work function material and a low channel dopant concentration in an active portion of the first active transistor. The IC device may also include a first isolation transistor of the first-type in the first-type region. The second active transistor may have a second-type work function material and the low channel dopant concentration in an active portion of the first isolation transistor. The first isolation transistor may be arranged adjacent to the first active transistor.
Public/Granted literature
- US20160254261A1 ADJACENT DEVICE ISOLATION Public/Granted day:2016-09-01
Information query
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