Invention Grant
- Patent Title: Thin film transistor and manufacturing method thereof, an array substrate and a display device
- Patent Title (中): 薄膜晶体管及其制造方法,阵列基板和显示装置
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Application No.: US14057728Application Date: 2013-10-18
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Publication No.: US09502570B2Publication Date: 2016-11-22
- Inventor: Xiang Liu , Gang Wang
- Applicant: BOE Technology Group Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Frommer Lawrence & Haug LLP
- Priority: CN201210401275 20121019
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/786 ; H01L29/423 ; H01L29/49 ; H01L27/12 ; H01L29/66

Abstract:
Embodiments of the present invention provide a thin film transistor and its manufacturing method, an array substrate and a display device, to improve the electrical performance of the thin film transistor and improve the picture quality of images displayed by the display device. The thin film transistor includes: a substrate; a gate, a source, a drain and a semiconductor layer formed on the substrate; a first gate protection layer; a gate isolation layer; and a second gate protection layer. The first gate protection layer is at least partly located between the gate and the semiconductor layer, and is an insulating layer. The gate isolation layer is at least partly located between the first gate protection layer and the second gate protection layer, and is a conductive layer. The second gate protection layer is at least partly located between the gate isolation layer and the semiconductor layer, and is an insulating layer.
Public/Granted literature
- US20140110716A1 Thin Film Transistor and Manufacturing Method Thereof, an Array Substrate and a Display Device Public/Granted day:2014-04-24
Information query
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