Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14943836Application Date: 2015-11-17
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Publication No.: US09503018B2Publication Date: 2016-11-22
- Inventor: Toshiaki Tsutsumi , Yoshihiro Funato , Tomonori Okudaira , Tadato Yamagata , Akihisa Uchida , Takeshi Terasaki , Tomohisa Suzuki , Yoshiharu Kanegae
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Main IPC: H03B5/24
- IPC: H03B5/24 ; H01L23/31 ; H01L23/522 ; H01L27/06 ; H03L7/24 ; H01L49/02 ; H01L23/00

Abstract:
A semiconductor device is formed by sealing, with a resin, a semiconductor chip (CP1) having an oscillation circuit utilizing a reference resistor. The oscillation circuit generates a reference current by utilizing the reference resistor, a voltage is generated in accordance with this reference current and an oscillation frequency of the oscillation unit, and the oscillation unit oscillates at a frequency in accordance with the generated voltage. The reference resistor is formed of a plurality of resistors, which extend in a first (Y) direction orthogonal to a first side, inside a first region (RG1, RG2, RG3, and RG4) surrounded by the first side (S1, S2, S3, and S4) of a main surface of the semiconductor chip (CP1), a first line (42, 43, 44, and 45) connecting between one end of the first side and the center (CT1) of the main surface of the semiconductor chip, and a second line (42, 43, 44, and 45) connecting between the other end of the first side and the center of the main surface of the semiconductor chip.
Public/Granted literature
- US20160142011A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-05-19
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