An exemplary current switching device includes an integrated gate-commutated thyristor with an anode, a cathode, and a gate, wherein a current between the anode and the cathode is interruptible by applying a switch-off voltage to the gate; and a gate unit for generating the switch-off voltage. The gate unit and a connection of the gate unit to the gate establish a gate circuit having a stray impedance. The gate unit is adapted for generating a spiked switch-off voltage with a maximum above a breakdown voltage (VGRMAX) between the cathode and the gate, such that the switch-off voltage at the gate stays below the breakdown voltage (VGRMAX) due to the stray impedance of the gate circuit.