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公开(公告)号：US20150162738A1
公开(公告)日：2015-06-11
申请号：US14328848
申请日：2014-07-11
Applicant: ABB Technology AG
Inventor： Tobias Wikström , Thomas Setz
IPC: H02H3/02
CPC classification number: H02H3/023 , H01L25/072 , H01L25/18 , H01L2924/0002 , H02M7/49 , H01L2924/00
Abstract: A high-power semiconductor module is disclosed, which can include a high-power semiconductor device mounted on the module and at least two electrical connections. The module can include a short-circuit device mounted on the module. The short-circuit device can generate a persistent electrically conducting path between the two electrical connections upon receiving a trigger signal by electrically destroying a semiconductor of the high-power semiconductor module.
Abstract translation: 公开了一种高功率半导体模块，其可以包括安装在模块上的大功率半导体器件和至少两个电连接。 该模块可以包括安装在模块上的短路装置。 短路装置在通过电破坏大功率半导体模块的半导体而接收到触发信号时，可以在两个电连接之间产生持久的导电路径。
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公开(公告)号：US09490621B2
公开(公告)日：2016-11-08
申请号：US14328848
申请日：2014-07-11
Applicant: ABB Technology AG
Inventor： Tobias Wikström , Thomas Setz
CPC classification number: H02H3/023 , H01L25/072 , H01L25/18 , H01L2924/0002 , H02M7/49 , H01L2924/00
Abstract: A high-power semiconductor module is disclosed, which can include a high-power semiconductor device mounted on the module and at least two electrical connections. The module can include a short-circuit device mounted on the module. The short-circuit device can generate a persistent electrically conducting path between the two electrical connections upon receiving a trigger signal by electrically destroying a semiconductor of the high-power semiconductor module.
Abstract translation: 公开了一种高功率半导体模块，其可以包括安装在模块上的大功率半导体器件和至少两个电连接。 该模块可以包括安装在模块上的短路装置。 短路装置在通过电破坏大功率半导体模块的半导体而接收到触发信号时，可以在两个电连接之间产生持久的导电路径。
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公开(公告)号：US09503082B2
公开(公告)日：2016-11-22
申请号：US14257509
申请日：2014-04-21
Applicant: ABB Technology AG
Inventor： Tobias Wikström
IPC: H03K17/72 , H03K17/732 , H03K17/0412
CPC classification number: H03K17/732 , H03K17/0412
Abstract: An exemplary current switching device includes an integrated gate-commutated thyristor with an anode, a cathode, and a gate, wherein a current between the anode and the cathode is interruptible by applying a switch-off voltage to the gate; and a gate unit for generating the switch-off voltage. The gate unit and a connection of the gate unit to the gate establish a gate circuit having a stray impedance. The gate unit is adapted for generating a spiked switch-off voltage with a maximum above a breakdown voltage (VGRMAX) between the cathode and the gate, such that the switch-off voltage at the gate stays below the breakdown voltage (VGRMAX) due to the stray impedance of the gate circuit.
Abstract translation: 示例性电流开关器件包括具有阳极，阴极和栅极的集成栅极换向晶闸管，其中通过向栅极施加关断电压来中断阳极和阴极之间的电流; 以及用于产生关断电压的栅极单元。 栅极单元和栅极单元与栅极的连接建立具有杂散阻抗的栅极电路。 栅极单元适于产生具有最大高于阴极和栅极之间的击穿电压（VGRMAX）的加标关断电压，使得栅极处的关断电压保持低于击穿电压（VGRMAX），由于 栅极电路的杂散阻抗。
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