Invention Grant
US09504118B2 Resistance measurement of a resistor in a bipolar junction transistor (BJT)-based power stage
有权
基于双极结型晶体管(BJT)的功率级中的电阻的电阻测量
- Patent Title: Resistance measurement of a resistor in a bipolar junction transistor (BJT)-based power stage
- Patent Title (中): 基于双极结型晶体管(BJT)的功率级中的电阻的电阻测量
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Application No.: US14624475Application Date: 2015-02-17
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Publication No.: US09504118B2Publication Date: 2016-11-22
- Inventor: Shatam Agarwal , Rahul Singh
- Applicant: Cirrus Logic, Inc.
- Applicant Address: US TX Austin
- Assignee: CIRRUS LOGIC, INC.
- Current Assignee: CIRRUS LOGIC, INC.
- Current Assignee Address: US TX Austin
- Agency: Norton Rose Fulbright US LLP
- Main IPC: H05B33/08
- IPC: H05B33/08

Abstract:
A bipolar junction transistor (BJT) may be used in a power stage DC-to-DC converter, such as a converter in LED-based light bulbs. The power stage may be operated by a controller to maintain a desired current output to the LED load. A resistor may be coupled to the BJT through a switch at the emitter of the BJT. The switch may regulate operation of the BJT by allowing current flow to ground through the resistor. The controller may perform measurements of the resistor to allow higher accuracy determinations of the current through the BJT and thus improve regulation of current to the LED load.
Public/Granted literature
- US20160242258A1 RESISTANCE MEASUREMENT OF A RESISTOR IN A BIPOLAR JUNCTION TRANSISTOR (BJT)-BASED POWER STAGE Public/Granted day:2016-08-18
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