发明授权
US09506141B2 Method for manufacturing a molybdenum sputtering target for back electrode of CIGS solar cell
有权
制造CIGS太阳能电池背面电极用钼溅射靶的方法
- 专利标题: Method for manufacturing a molybdenum sputtering target for back electrode of CIGS solar cell
- 专利标题(中): 制造CIGS太阳能电池背面电极用钼溅射靶的方法
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申请号: US14002666申请日: 2012-03-07
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公开(公告)号: US09506141B2公开(公告)日: 2016-11-29
- 发明人: Ik Hyun Oh , Hyun Kuk Park , Seung Min Lee , Jun Mo Yang
- 申请人: Ik Hyun Oh , Hyun Kuk Park , Seung Min Lee , Jun Mo Yang
- 申请人地址: KR Cheonan-Si
- 专利权人: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY
- 当前专利权人: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY
- 当前专利权人地址: KR Cheonan-Si
- 代理机构: Lex IP Meister, PLLC
- 优先权: KR10-2011-0020586 20110308
- 国际申请: PCT/KR2012/001653 WO 20120307
- 国际公布: WO2012/121542 WO 20120913
- 主分类号: C23C14/34
- IPC分类号: C23C14/34 ; H01L31/0224 ; B22F3/105 ; C22C1/04 ; H01L31/0392 ; B22F3/10 ; B22F3/14
摘要:
A method for manufacturing a molybdenum sputtering target for a back electrode of a CIGS solar cell is provided to minimize thermal activating reaction by employing an electric discharge plasma sintering process. The method for manufacturing a molybdenum sputtering target for a back electrode of a CIGS solar cell comprises the steps of: charging molybdenum powder in a mold of graphite material, mounting the mold in a chamber of an electric discharge sintering apparatus, making a vacuum in the chamber, forming the molybdenum powder to the final target temperature while maintaining constant pressure on the molybdenum powder, heating the molybdenum powder in a predetermined heating pattern when reaching the final target temperature, maintaining the final target temperature for 1 to 10 minutes, and cooling the inside of the chamber while maintaining a constant pressure.
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