Invention Grant
- Patent Title: Precise definition of transducer electrodes
- Patent Title (中): 传感器电极的精确定义
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Application No.: US14410211Application Date: 2013-06-12
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Publication No.: US09507142B2Publication Date: 2016-11-29
- Inventor: Peter Agren
- Applicant: SILEX MICROSYSTEMS AB
- Applicant Address: SE Jarfalla
- Assignee: SILEX MICROSYSTEMS AB
- Current Assignee: SILEX MICROSYSTEMS AB
- Current Assignee Address: SE Jarfalla
- Agency: Young & Thompson
- Priority: SE1250672-1 20120621
- International Application: PCT/SE2013/050678 WO 20130612
- International Announcement: WO2013/191618 WO 20131227
- Main IPC: G02B26/08
- IPC: G02B26/08 ; H01L23/48 ; B81B3/00 ; B81C1/00 ; G01D5/24 ; H01L23/522

Abstract:
A semiconductor device, includes a semiconductor substrate (10) having a first (12a) and a second (12b) side. There is provided at least one via (15) extending through the substrate (10) having first (16a) and second (16b) end surfaces, the first end surface (16a) constituting a transducer electrode for interacting with a movable element (14) arranged at the first side (12a) of the substrate (10). A shield (17) is provided on and covers at least part of the first side (12a) of the substrate (10), the shield/mask (17) including a conductive layer (19a) and an insulating material layer (19b) provided between the substrate (10) and the conductive layer (19a). The mask has an opening (18) exposing only a part of the first surface (16a) of the via. Preferably the opening (18) in the mask is precisely aligned with the movable element, and the area of the opening is accurately defined.
Public/Granted literature
- US20150370063A1 PRECISE DEFINITION OF TRANSDUCER ELECTRODES Public/Granted day:2015-12-24
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