Invention Grant
- Patent Title: Formation of solder and copper interconnect structures and associated techniques and configurations
- Patent Title (中): 形成焊料和铜互连结构及相关技术和配置
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Application No.: US14581825Application Date: 2014-12-23
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Publication No.: US09508667B2Publication Date: 2016-11-29
- Inventor: Edward R. Prack
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/768 ; H01L23/532

Abstract:
Embodiments of the present disclosure are directed toward formation of solder and copper interconnect structures and associated techniques and configurations. In one embodiment, a method includes providing an integrated circuit (IC) substrate and depositing a solderable material on the IC substrate using an ink deposition process, a binder printing system, or a powder laser sintering system. In another embodiment, a method includes providing an integrated circuit (IC) substrate and depositing a copper powder on the IC substrate using an additive process to form a copper interconnect structure. Other embodiments may be described and/or claimed.
Public/Granted literature
- US20160181217A1 FORMATION OF SOLDER AND COPPER INTERCONNECT STRUCTURES AND ASSOCIATED TECHNIQUES AND CONFIGURATIONS Public/Granted day:2016-06-23
Information query
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